If the way equipping extra reversed switch and reducing the resistance of the loop of the currentmeter was adopted,it would get more accurate result of measurement than usual.
采取加设反向开关和减小检流计回路电阻等措施 ,可获得比通常测法精确得多的测量结
The backward switching time of the two compositions varies from 1 μs to 12 μs.
材料的反向开关时间为1~12μs,开关时间随反向相变电场的升高而减小,且与样品的尺寸有关。
In order to produce and control high repetitive pulses of pulse width at μs,ns and power beyond MW,a new structure of great power and super high speed semiconductor switch reversely switched dynistor(RSD) applied to laser diode (LD) pulsed source was researched.
研究了一种应用于激光驱动源的大功率超高速半导体开关反向开关晶体管(RSD)的新结构,以实现μs、ns脉宽、MW以上的高重复率脉冲的产生和控制。
本站部份资料来自网络或由网友提供,如有问题请速与我们联系,我们将立即处理!
Copyright © 2013-2024 杭州优配网络科技有限公司 All Rights Reserved 浙ICP备20019715号
免责声明:本站非营利性站点,以方便网友为主,仅供学习。合作/投诉联系QQ:1553292129