The diffusion was researched through analyzing characteristics of the pre-deposition process and the drive-in process.
结合预淀积和再分布两种条件下扩散的特点,采用两步法工艺制备了高浓度硼深扩散硅片,研究了影响杂质浓度和扩散深度的再分布与预淀积时间比。
Effect of boron pre-deposition on size distribution of self-assembled Ge islands fabricated by UHV/CVD;
硼预淀积对自组织生长Ge量子点尺寸分布的影响
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